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Study of the effects of radiation on the electrical and optical properties of HgCdTe. Final report, 15 Apr 1972--30 Apr 1975

Technical Report ·
OSTI ID:7286867
This report presents the results of experimental and theoretical investigations of the effects of electron, neutron, and gamma irradiations on the optical and electrical properties of the alloy semiconductor HgCdTe. The objective of the study is to obtain sufficient radiation effects data to enable prediction of the radiation response of infrared detector devices fabricated from HgCdTe. The results of a 14-MeV neutron irradiation at 80/sup 0/K on n-type Hg(0.8)Cd(0.2)Te are discussed. The results of 80/sup 0/K 5-MeV electron and fission-neutron irradiations and isochronal anneal of p-type Hg(0.8)Cd(0.2)Te are discussed. The results of various types of irradiations at 10 and 80/sup 0/K are summarized and presented in terms of damage parameters that are then applied to HgCdTe photoconductive detectors to predict response degradation. A qualitative discussion of possible damage mechanisms in HgCdTe photovoltaic detectors is also included. (GRA)
Research Organization:
Intelcom Rad Tech, San Diego, Calif. (USA)
OSTI ID:
7286867
Report Number(s):
AD-A-016756; RT-8027-019
Country of Publication:
United States
Language:
English