Electrical and recombination properties of electron-irradiated Pb/sub 1en-dashx/Sn/sub x/Te and Pb/sub 1en-dashy/Sn/sub y/Se crystals
Journal Article
·
· Sov. Phys. - Semicond. (Engl. Transl.); (United States)
OSTI ID:6760325
An investigation was made of the electrical (R, sigma) and recombination (tau) properties of n- and p-type Pb/sub 1en-dashx/Sn/sub x/Te and Pb/sub 1en-dashy/Sn/sub y/Se single crystals (x (y) =0.096--0.17) irradiated with 2 MeV electrons at Tapprox. =300/sup 0/K in doses up to approx.10/sup 18/ cm/sup -2/. It was found that, irrespective of the initial type of conduction, strongly irradiated Pb/sub 1en-dashx/Sn/sub x/Te crystals had n-type conduction (n/sub lim/approx. =10/sup 17/ cm/sup -3/ at 77/sup 0/K, whereas Pb/sub 1en-dashy/Sn/sub y/Se crystals exhibited a reduction in the hole density as a result of irradiation. An increase in the photosensitivity of the original p-type Pb/sub 1en-dashx/Sn/sub x/Te at lambda=10.6 ..mu.. was observed after electron bombardment. Isochronous annealing stage of R, sigma, and tau was observed at T=390--410/sup 0/K. The changes in the properties of Pb/sub 1en-dashx/Sn/sub x/Te and Pb/sub 1en-dashy/Sn/sub y/Se as a result of irradiation at Tapprox. =300/sup 0/K were attributed to the formation of defects which included Te or Se vacancies.
- Research Organization:
- V. D. Kuznetsov Siberian Physicotechnical Scientific-Research Institute at the State University, Tomsk
- OSTI ID:
- 6760325
- Journal Information:
- Sov. Phys. - Semicond. (Engl. Transl.); (United States), Journal Name: Sov. Phys. - Semicond. (Engl. Transl.); (United States) Vol. 12:8; ISSN SPSEA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
CHALCOGENIDES
COLLISIONS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELECTRICAL PROPERTIES
ELECTRON COLLISIONS
ENERGY RANGE
LEAD COMPOUNDS
LEAD SELENIDES
LEAD TELLURIDES
MEDIUM TEMPERATURE
MEV RANGE
MEV RANGE 01-10
PHOTOSENSITIVITY
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
POINT DEFECTS
RADIATION EFFECTS
RECOMBINATION
SELENIDES
SELENIUM COMPOUNDS
SENSITIVITY
TELLURIDES
TELLURIUM COMPOUNDS
TIN COMPOUNDS
TIN SELENIDES
TIN TELLURIDES
VACANCIES
360605* -- Materials-- Radiation Effects
CHALCOGENIDES
COLLISIONS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELECTRICAL PROPERTIES
ELECTRON COLLISIONS
ENERGY RANGE
LEAD COMPOUNDS
LEAD SELENIDES
LEAD TELLURIDES
MEDIUM TEMPERATURE
MEV RANGE
MEV RANGE 01-10
PHOTOSENSITIVITY
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
POINT DEFECTS
RADIATION EFFECTS
RECOMBINATION
SELENIDES
SELENIUM COMPOUNDS
SENSITIVITY
TELLURIDES
TELLURIUM COMPOUNDS
TIN COMPOUNDS
TIN SELENIDES
TIN TELLURIDES
VACANCIES