Scanning tunneling microscopy and spectroscopy of the Si(111) 5x5 surface

Journal Article · · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)

OSTI ID:5228302

Feenstra, R M; Lutz, M A ^[1]

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1. T. J. Watson Research Center, Yorktown Heights, NY (United States)

This paper describes using the scanning tunneling microscope to study the structural and electronic properties of the 5x5 reconstruction on the Si(111) surface. The 5x5 structure is formed by annealing 2x1 cleaved surfaces. Results are described for temperature-dependent imaging, voltage-dependent imaging, and spectroscopy. The structure of the 5x5 surface is found to be consistent with the dimer-adatom-stacking-fault model. From a comparison of neighboring regions of 2x1 and 5x5 structures, the {pi}-bonded chain structure for the 2x1 surface is also confirmed.

• OSTI ID: 5228302
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States), Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States) Vol. 9:2; ISSN 0734-211X; ISSN JVTBD
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure & Phase Studies
360606 -- Other Materials-- Physical Properties-- (1992-)
ANNEALING
CRYSTAL STRUCTURE
DIMERS
ELECTRICAL PROPERTIES
ELECTRON MICROSCOPY
ELEMENTS
HEAT TREATMENTS
MATHEMATICAL MODELS
MICROSCOPY
MICROSTRUCTURE
PHYSICAL PROPERTIES
SEMIMETALS
SILICON
SPECTROSCOPY
TEMPERATURE DEPENDENCE
TUNNELING