Successive oxidation stages and annealing behavior of the Si(111) 7x7 surface observed with scanning tunneling microscopy and scanning tunneling spectroscopy

Journal Article · · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)

OSTI ID:5160631

Pelz, J P; Koch, R H ^[1]

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1. T. J. Watson Research Center, Yorktown Heights, NY (United States)

This paper describes the use of scanning tunneling microscopy and spectroscopy to reveal at least a two-stage reaction process which occurs at adatom sites on Si (111) 7x7 surfaces exposed to oxygen at 300K. Reacted adatoms in the first stage have a slightly modified electronic spectrum and show a preference for the faulted half and the corners of the 7x7 unit cell, while second stage adatoms appear similar to missing or lowered adatoms in topographic images. Annealing the surface to {approximately}625 K causes large changes in the number and site preference of the two stages.

• OSTI ID: 5160631
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States), Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States) Vol. 9:2; ISSN 0734-211X; ISSN JVTBD
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
360604* -- Materials-- Corrosion
Erosion
& Degradation
ANNEALING
CHEMICAL REACTIONS
ELECTRON MICROSCOPY
ELEMENTS
HEAT TREATMENTS
KINETICS
MICROSCOPY
OXIDATION
REACTION KINETICS
SEMIMETALS
SILICON
SPECTROSCOPY
TEMPERATURE RANGE
TEMPERATURE RANGE 0400-1000 K