Correlations between the Scanning Tunneling Microscopy Imaged Configurations and the Electronic Structure on Stepped Si(111)-(7x7 ) Surfaces

Journal Article · Mon Mar 27 04:00:00 EST 2000 · Physical Review Letters

DOI:https://doi.org/10.1103/PhysRevLett.84.2877· OSTI ID:20215865

Hupalo, M; Min, B J; Wang, C Z; Ho, K M; Tringides, M C

We have observed the dependence of the scanning tunneling microscopy (STM) imaged atom intensity within the (7x7) unit cell on stepped Si(111) as a function of the tunneling voltage. Pronounced differences from the corresponding atom intensity on the flat surface are observed for the contrast of atoms on the low versus the high side of the step and for the contrast between the faulted versus unfaulted subcells of the (7x7) structure. These differences can be accounted for by changes in the electronic structure within the (7x7) subcells adjacent to the step. Calculations of the local density of states and the STM images using a tight-binding method are in excellent agreement with the experimental results. (c) 2000 The American Physical Society.

• OSTI ID: 20215865
• Journal Information: Physical Review Letters, Journal Name: Physical Review Letters Journal Issue: 13 Vol. 84; ISSN 0031-9007; ISSN PRLTAO
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ADSORPTION
ELECTRONIC STRUCTURE
ENERGY-LEVEL DENSITY
EXPERIMENTAL DATA
FERMI LEVEL
SILICON
SURFACE PROPERTIES
THEORETICAL DATA
TUNNEL EFFECT
WAVE FUNCTIONS