Scanning tunneling microscopy of microstructure on cleaved Si(111) surface
- Electrotechnical Lab., Ibaraki (Japan)
This paper describes scanning tunneling microscopy (STM) of microstructures resulting from stresses during cleaving on cleaved Si(111) surfaces. STM images with large scanning area (10x10 {mu}m{sup 2}) have revealed the existence of large-scale microstructures which are closely related to the river pattern seen in optical microscope images. When a fairly flat region in the STM images is magnified, several interesting features are found: triangular-shaped terraces and long but narrow terraces with regular parallel (11{bar 2}) oriented steps. On the triangular terraces, there exist the dimer rows of the Si(111)-2x1 reconstruction. The atomic rows observed in the STM images on the parallel-stepped terraces can be explained by a 3x1 reconstruction on a Si(221) surface.
- OSTI ID:
- 5161328
- Journal Information:
- Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States), Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States) Vol. 9:2; ISSN 0734-211X; ISSN JVTBD
- Country of Publication:
- United States
- Language:
- English
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