Laser and thermal annealed Si(111) and Si(001) surfaces studied by scanning tunneling microscopy

Journal Article · · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)

DOI:https://doi.org/10.1116/1.585530· OSTI ID:5188827

Tarrach, G; Wiesendanger, R; Buergler, D; Scandella, L; Guentherodt, H J ^[1]

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1. Univ. Basel (Switzerland)

This paper describes uses scanning tunneling microscopy to study the local structure of the Si(111) 7x7 and Si(001)2x1 reconstructions in the vicinity of step edges and to investigate the transition from order to disorder on laser-irradiated Si(111). Atomic resolution even in the presence of multiple steps and characteristic defects on the lower terrace at the step edges are reported for the Si(111) surface. Furthermore, the authors achieved atomic resolution in several regions exhibiting different degrees of disorder after laser irradiation. These measurements are compared to a simple geometric model using pair-correlation functions. High-resolution images of the Si(001)2x1 reconstruction reveal buckled dimers near defects and monatomic type A steps when probing the empty states of the sample.

• OSTI ID: 5188827
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States), Vol. 9:2; ISSN 0734-211X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SILICON
CRYSTAL STRUCTURE
ORDER-DISORDER TRANSFORMATIONS
ANNEALING
ELECTRON MICROSCOPY
HEATING
SPATIAL RESOLUTION
SWITZERLAND
THERMAL RADIATION
DEVELOPED COUNTRIES
ELECTROMAGNETIC RADIATION
ELEMENTS
EUROPE
HEAT TREATMENTS
MICROSCOPY
PHASE TRANSFORMATIONS
RADIATIONS
RESOLUTION
SEMIMETALS
360602* - Other Materials- Structure & Phase Studies