Scanning-tunneling-microscopy study of Pb on Si(111)

Journal Article · Sat Jul 15 04:00:00 EDT 1995 · Physical Review, B: Condensed Matter

DOI:https://doi.org/10.1103/PhysRevB.52.1481· OSTI ID:82240

Tang, D; Elsayed-Ali, H E ^[1]; Wendelken, J; Xu, J ^[2]

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1. Physical Electronics Research Institute, Department of Electrical Computer Engineering, Old Dominion University, Norfolk, Virginia 23529 (United States)
2. Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)

Scanning-tunneling microscopy has been used to study temperature and coverage dependence of the structure of lead on the Si(111)-7{times}7 surface. For low Pb coverage, the Pb atoms favored the faulted sites. The ratio between the number of Pb atoms on faulted to unfaulted sites increased after sample annealing. An energy difference of 0.05 eV associated with a Pb atom on these two sites is estimated. The mobility of Pb atoms on Si(111) was observed at a temperature as low as 260 {degree}C for a coverage of 0.1 and 1 ML.

• DOE Contract Number: FG05-93ER45505
• OSTI ID: 82240
• Journal Information: Physical Review, B: Condensed Matter, Journal Name: Physical Review, B: Condensed Matter Journal Issue: 3 Vol. 52; ISSN PRBMDO; ISSN 0163-1829
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ADSORPTION
CRYSTAL STRUCTURE
INTERFACES
LEAD
MOBILITY
SILICON