High-performance 1.06-{micro}m selectively oxidized vertical-cavity surface-emitting lasers with InGaAs-GaAsP strain-compensated quantum wells
Journal Article
·
· IEEE Photonics Technology Letters
- Sandia National Labs., Albuquerque, NM (United States)
The authors present the first room-temperature continuous-wave operation of high-performance 1.06-{micro}m selectively oxidized vertical-cavity surface-emitting lasers (VCSEL`s). The lasers contain strain-compensated InGaAs-GaAsP quantum wells (QW`s) in the active region grown by metalorganic vapor phase epitaxy. The threshold current is 190 {micro}A for a 2.5 x 2.5 {micro}m{sup 2} device, and the threshold voltage is as low as 1.255 V for a 6 x 6 {micro}m{sup 2} device. Lasing at a wavelength as long as 1.1 {micro}m was also achieved. They discuss the wavelength limit for lasers using the strain-compensated QW`s on GaAs substrates.
- Research Organization:
- Sandia National Laboratory
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 522423
- Journal Information:
- IEEE Photonics Technology Letters, Journal Name: IEEE Photonics Technology Letters Journal Issue: 8 Vol. 9; ISSN 1041-1135; ISSN IPTLEL
- Country of Publication:
- United States
- Language:
- English
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