Effect of GaAsP barrier layers on the parameters of InGaAs/AlGaAs laser diodes emitting in the 1050-1100-nm spectral range
- M.F. Stel'makh Polyus Research and Development Institute, Moscow (Russian Federation)
To improve the parameters of laser diodes emitting in the 1000-1070-nm spectral range and develop highly efficient laser diodes emitting in the 1070-1100-nm range, it is proposed to introduce GaAsP barrier layers into the active region of the quantum-well InGaAs/AlGaAs heterostructure, which compensate for enhanced mechanical stresses. This considerably improves the luminescence characteristics of heterostructures and changes conditions for generating misfit dislocations. The long-wavelength lasing at 1100 nm becomes possible due to an increase in the thickness of quantum wells and in the molar fraction of InAs in them. The manufactured laser diodes emitting in the 1095-1100-nm range have low threshold currents, the high output power and high reliability. (lasers)
- OSTI ID:
- 21470833
- Journal Information:
- Quantum Electronics (Woodbury, N.Y.), Journal Name: Quantum Electronics (Woodbury, N.Y.) Journal Issue: 10 Vol. 35; ISSN 1063-7818
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
GENERAL PHYSICS
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
CURRENTS
DIODE TUBES
DISLOCATIONS
ELECTRIC CURRENTS
ELECTRON TUBES
EMISSION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
LASERS
LINE DEFECTS
LUMINESCENCE
NANOSTRUCTURES
PHOTON EMISSION
PNICTIDES
QUANTUM WELLS
STRESSES
THRESHOLD CURRENT
WAVELENGTHS