Effect of GaAsP barrier layers on the parameters of InGaAs/AlGaAs laser diodes emitting in the 1050-1100-nm spectral range

Journal Article · Mon Oct 31 00:00:00 EST 2005 · Quantum Electronics (Woodbury, N.Y.)

DOI:https://doi.org/10.1070/QE2005V035N10ABEH005742· OSTI ID:21470833

Duraev, V P; Marmalyuk, Aleksandr A; Padalitsa, A A; Petrovskii, A V; Ryaboshtan, Yu L; Sumarokov, M A; Sukharev, A V ^[1]

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1. M.F. Stel'makh Polyus Research and Development Institute, Moscow (Russian Federation)

To improve the parameters of laser diodes emitting in the 1000-1070-nm spectral range and develop highly efficient laser diodes emitting in the 1070-1100-nm range, it is proposed to introduce GaAsP barrier layers into the active region of the quantum-well InGaAs/AlGaAs heterostructure, which compensate for enhanced mechanical stresses. This considerably improves the luminescence characteristics of heterostructures and changes conditions for generating misfit dislocations. The long-wavelength lasing at 1100 nm becomes possible due to an increase in the thickness of quantum wells and in the molar fraction of InAs in them. The manufactured laser diodes emitting in the 1095-1100-nm range have low threshold currents, the high output power and high reliability. (lasers)

• OSTI ID: 21470833
• Journal Information: Quantum Electronics (Woodbury, N.Y.), Vol. 35, Issue 10; Other Information: DOI: 10.1070/QE2005v035n10ABEH005742; ISSN 1063-7818
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ALUMINIUM ARSENIDES
DIODE TUBES
DISLOCATIONS
GALLIUM ARSENIDES
INDIUM ARSENIDES
LASERS
LUMINESCENCE
QUANTUM WELLS
STRESSES
THRESHOLD CURRENT
WAVELENGTHS
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
CURRENTS
ELECTRIC CURRENTS
ELECTRON TUBES
EMISSION
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
LINE DEFECTS
NANOSTRUCTURES
PHOTON EMISSION
PNICTIDES