Laser diodes with several emitting regions ({lambda} = 800-1100 nm) on the basis of epitaxially integrated heterostructures
- Stel'makh Research and Development Institute 'Polyus' (Russian Federation)
- Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation)
The results of a series of studies concerned with formation of epitaxially integrated InGaAs/AlGaAs and AlGaAs/AlGaAs heterostructures with several emitting regions and with investigation of properties of laser diodes based on the above structures operating in the spectral ranges {lambda} = 800-810, 890-910, and 1040-1060 nm are summarized. It is shown that the suggested approach to integration of individual laser structures by the method of the MOVPE epitaxy operates efficiently in fabrication of laser diodes for a wide spectral range on the basis of various types of heterostructures. This approach made it possible to efficiently increase the output power of the laser diodes practically without variation in their mass-and-dimension characteristics. The main advantages of this approach and its limitations are outlined. Epitaxial integration of two laser heterostructures made it possible to increase the differential quantum efficiency by 1.7-2.0 times, while integration of three laser heterostructures increases the differential quantum efficiency by a factor of 2.5-3.0.
- OSTI ID:
- 22004828
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 4 Vol. 45; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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