High-power single-mode laser diodes based on carbon-doped quantum-well InGaAs/AlGaAs heterostructures

Journal Article · Sat Jan 31 00:00:00 EST 2009 · Quantum Electronics (Woodbury, N.Y.)

DOI:https://doi.org/10.1070/QE2009V039N01ABEH013933· OSTI ID:21466496

Davydova, Evgeniya I; Ladugin, M A; Marmalyuk, Aleksandr A; Padalitsa, A A; Petrovskii, A V; Sukharev, A V; Uspenskii, Mikhail B; Shishkin, Viktor A ^[1]

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1. M.F. Stel'makh Polyus Research and Development Institute, Moscow (Russian Federation)

Emission parameters of single-mode laser diodes based on InGaAs/GaAs/AlGaAs heterostructures doped with carbon and grown by using the metallorganic vapour phase epitaxy (MOVPE) technique are studied. The obtained results show that maintaining a certain doping profile ensuring optimisation of series resistance and internal optical losses during all fabrication stages of the active element of a diode laser, provides for enhancement of the laser efficiency. Based on laser heterostructures studied in this paper, highly efficient single-transverse-mode laser diodes emitting 300 mW at 980 nm have been manufactured. (lasers)

• OSTI ID: 21466496
• Journal Information: Quantum Electronics (Woodbury, N.Y.), Vol. 39, Issue 1; Other Information: DOI: 10.1070/QE2009v039n01ABEH013933; ISSN 1063-7818
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM ARSENIDES
CARBON
DOPED MATERIALS
EMISSION
FABRICATION
GALLIUM ARSENIDES
INDIUM ARSENIDES
OPTIMIZATION
QUANTUM WELLS
VAPOR PHASE EPITAXY
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL GROWTH METHODS
ELEMENTS
EPITAXY
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
MATERIALS
NANOSTRUCTURES
NONMETALS
PNICTIDES