Highly uniform and reproducible visible to near-infrared vertical-cavity surface-emitting lasers grown by MOVPE

Conference · Thu May 01 04:00:00 EDT 1997

OSTI ID:474940

Hou, H Q; Choquette, K D; Hammons, B E; Breiland, W G; Crawford, M H; Lear, K L ^[1]

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1. Sandia National Labs., Albuquerque, NM (United States). Center for Compound Semiconductors Technology

The authors present the growth and characterization of vertical-cavity surface emitting lasers (VCSELs) from visible to near-infrared wavelength grown by metalorganic vapor phase epitaxy. Discussions on the growth issue of VCSEL materials include the control on growth rate and composition using an in situ normal-incidence reflectometer, optimization of ultra-high material uniformity, and comprehensive p- and n-type doping study in AlGaAs by CCl{sub 4} and Si{sub 2}H{sub 6} over the entire Al composition range. They will also demonstrate the recent achievements of selectively-oxidized VCSELs which include the first room-temperature continuous-wave demonstration of all-AlGaAs 700-nm red VCSELs, high-performance n-side up 850-nm VCSELs, and low threshold current and low-threshold voltage 1.06 {micro}m VCSELs using InGaAs/GaAsP strain-compensated quantum wells.

• Research Organization: Sandia National Labs., Albuquerque, NM (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 474940
• Report Number(s): SAND--97-0967C; CONF-970231--31; ON: DE97005383
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
ALUMINIUM ARSENIDES
CRYSTAL DOPING
GALLIUM ARSENIDES
LASER MATERIALS
LASER RADIATION
NEAR INFRARED RADIATION
SEMICONDUCTOR LASERS
VAPOR PHASE EPITAXY
VISIBLE RADIATION