On the Application of Strain-Compensating GaAsP Layers for the Growth of InGaAs/GaAs Quantum-Well Laser Heterostructures Emitting at Wavelengths above 1100 nm on Artificial Ge/Si Substrates

Journal Article · Fri Dec 14 23:00:00 EST 2018 · Semiconductors

DOI:https://doi.org/10.1134/S1063782618120060· OSTI ID:22749709

Krasilnik, Z. F.; Kudryavtsev, K. E. ^[1]; Nekorkin, S. M. ^[2]; Novikov, A. V. ^[1]; Rykov, A. V.; Reunov, D. G. ^[2]; Shaleev, M. V.; Yunin, P. A.; Yurasov, D. V. ^[1]

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1. Institute for Physics of Microstructures, Russian Academy of Sciences (Russian Federation)
2. Lobachevsky State University of Nizhny Novgorod (Russian Federation)

Stressed InGaAs/GaAs quantum-well laser structures are grown by gas-phase epitaxy from organometallic compounds on GaAs substrates and artificial Ge/Si substrates based on Si(001) with an epitaxial metamorphic Ge layer. To suppress the relaxation of elastic stresses during the growth of InGaAs quantum wells with a high fraction of In, strain-compensating GaAsP layers are applied. The structural and radiative properties of the samples grown on substrates of various types are compared. Stimulated radiation at wavelengths up to 1.24 μm at 300 K is obtained for structures grown on GaAs substrates and at wavelengths up to 1.1 μm at 77 K, for structures grown on Ge/Si substrates.

• OSTI ID: 22749709
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 12 Vol. 52; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL GROWTH
GALLIUM ARSENIDES
GERMANIUM
INDIUM ARSENIDES
LASERS
ORGANOMETALLIC COMPOUNDS
QUANTUM WELLS
SUBSTRATES
WAVELENGTHS