Stimulated Emission at 1.3-μm Wavelength in Metamorphic InGaAs/InGaAsP Structure with Quantum Wells Grown on Ge/Si(001) Substrate

Journal Article · Wed Aug 15 00:00:00 EDT 2018 · Technical Physics Letters

DOI:https://doi.org/10.1134/S1063785018080175· OSTI ID:22786308

Aleshkin, V. Ya. ^[1]; Baidus, N. V.; Vikhrova, O. V. ^[2]; Zvonkov, B. N. ^[2]; Krasilnik, Z. F.; Kudryavtsev, K. E. ^[1]; Nekorkin, S. M. ^[2]; Novikov, A. V. ^[1]; Rykov, A. V.; Samartsev, I. V. ^[2]; Yurasov, D. V. ^[1]

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1. Russian Academy of Sciences, Institute for Physics of Microstuctures (Russian Federation)
2. Lobachevsky State University of Nizhny Novgorod (Russian Federation)

A laser structure comprising metamorphic InGaAsP layer and InGaAs quantum wells on a non-inclined Si(001) substrate with relaxed Ge buffer layer has been grown for the first time by metal-organic vapor phase epitaxy (MOVPE). The optically pumped lasers exhibit stimulated emission at a wavelength of 1.3 μm. At liquid-nitrogen temperature, the threshold power density of pumping at 0.8 μm amounted to 250 kW/cm{sup 2}.

• OSTI ID: 22786308
• Journal Information: Technical Physics Letters, Journal Name: Technical Physics Letters Journal Issue: 8 Vol. 44; ISSN 1063-7850
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
ARSENIC COMPOUNDS
BUFFERS
GALLIUM COMPOUNDS
GERMANIUM
INDIUM COMPOUNDS
LAYERS
ORGANOMETALLIC COMPOUNDS
PHOSPHORUS COMPOUNDS
POWER DENSITY
QUANTUM WELLS
SILICON
STIMULATED EMISSION
SUBSTRATES
VAPOR PHASE EPITAXY
WAVELENGTHS