Yb:FAP and related materials, laser gain medium comprising same, and laser systems using same

Patent · Tue Jan 18 00:00:00 EST 1994

OSTI ID:5221265

Krupke, W F; Payne, S A; Chase, L L; Smith, L K

An ytterbium doped laser material remarkably superior to all others, including Yb:YAG, comprises ytterbium doped apatite (Yb:Ca[sub 5](PO[sub 4])[sub 3]F) or Yb:FAP, or ytterbium doped crystals that are structurally related to FAP. The new laser material is used in laser systems pumped by diode pump sources having an output near 0.905 microns or 0.98 microns, such as InGaAs and AlInGaAs, or other narrowband pump sources near 0.905 microns or 0.98 microns. The laser systems are operated in either the conventional or ground state depletion mode. 9 figures.

• DOE Contract Number: W-7405-ENG-48
• Assignee: Dept. of Energy, Washington, DC ()
• Patent Number(s): US 5280492; A
• Application Number: PPN: US 7-792792
• OSTI ID: 5221265
• Resource Relation: Patent File Date: 15 Nov 1991
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SOLID STATE LASERS
DESIGN
LASER MATERIALS
DOPED MATERIALS
OPERATION
OPTICAL PUMPING
LASERS
MATERIALS
PUMPING
426002* - Engineering- Lasers & Masers- (1990-)