Characterization of Yb{sup 3+}:Sr{sub 5{minus}x}Ba{sub x}(PO{sub 4}){sub 3}F crystals for diode pumped lasers
- Lawrence Livermore National Lab., CA (United States)
Ytterbium-doped Sr{sub 5}(PO{sub 4}){sub 3}F (S-FAP) has been shown to be a useful material for diode pumping, since it displays high gain, low loss, and a long radiative lifetime. One of the issues with S-FAP is that it has a relatively narrow absorption bandwidth ({approximately}5 nm) at 900 nm, the diode-pumping wavelength, while the diode`s output bandwidth can be large ({approximately}10 nm). By changing the host slightly, the absorption feature can be broadened to better match the pump bandwidth. Four mixed crystal boules of Yb{sup 3+}:Sr{sub 5{minus}x}Ba{sub x}(PO{sub 4}){sub 3}F were grown by the Czochralski method with x = 0.25, 0.5, 1, and 2. The bandwidth of the 900-nm absorption feature was found to grow with increasing barium concentration from 4.7 nm to a maximum of 15.9 nm. Emission spectra showed a similar bandwidth increase with barium content from 4.9 nm to a maximum of 10 nm. Emission cross sections for these materials were deduced by the methods of reciprocity, the Einstein method, and small-signal gain. The absorption feature`s homogeneity was probed using a tunable pump source which qualitatively showed that the barium-broadened lines were at least partly inhomogeneous. Each of these materials lased with a variety of output couplers. This family of materials was found to provide suitable laser hosts where a broader absorption and/or emission bandwidth is desired.
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- W-7405-ENG-48
- OSTI ID:
- 343624
- Journal Information:
- IEEE Journal of Quantum Electronics, Journal Name: IEEE Journal of Quantum Electronics Journal Issue: 4 Vol. 35; ISSN 0018-9197; ISSN IEJQA7
- Country of Publication:
- United States
- Language:
- English
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