Diode-pumped ytterbium-doped Sr{sub 5}(PO{sub 4}){sub 3}F laser performance
- Lawrence Livermore National Lab., CA (United States)
- Univ. of Central Florida, Orlando, FL (United States). Center for Research and Education in Optics and Lasers
The performance of the first diode-pumped Yb{sup 3+}-doped Sr{sub 5}(PO{sub 4}){sup 3}F (Yb:S-FAP) solid-state laser is discussed. An InGaAs diode array has been fabricated that has suitable specifications for pumping a 3 x 3 x 30 mm Yb:S-FAP rod. The saturation fluence for diode pumping was deduced to be 5.5 J/cm{sup 2} for the particular 2.8 kW peak power diode array utilized in the studies. This is 2.5{times} higher than the intrinsic 2.2 J/cm{sup 2} saturation fluence as is attributed to the 6.5 nm bandwidth of the diode pump array. The small signal gain is consistent with the previously measured emission cross section of 6.0 {times} 10{sup {minus}20} cm{sup 2}, obtained from a narrowband-laser pumped gain experiment. Up to 1.7 J/cm{sup 3} of stored energy density was achieved in a 6 x 6 x 44 mm Yb:S-FAP amplifier rod. In a free running configuration, diode-pumped slope efficiencies up to 43% (laser output energy/absorbed pump energy) were observed with output energies up to {approximately}0.5 J per 1 ms pulse. When the rod was mounted in a copper block for cooling, 13 W of average power was produced with power supply limited operation at 70 Hz with 500 {micro}s pulses.
- DOE Contract Number:
- W-7405-ENG-48
- OSTI ID:
- 231094
- Journal Information:
- IEEE Journal of Quantum Electronics, Vol. 32, Issue 4; Other Information: PBD: Apr 1996
- Country of Publication:
- United States
- Language:
- English
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