skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Diode-pumped ytterbium-doped Sr{sub 5}(PO{sub 4}){sub 3}F laser performance

Journal Article · · IEEE Journal of Quantum Electronics
DOI:https://doi.org/10.1109/3.488839· OSTI ID:231094
; ; ; ; ; ;  [1];  [2]
  1. Lawrence Livermore National Lab., CA (United States)
  2. Univ. of Central Florida, Orlando, FL (United States). Center for Research and Education in Optics and Lasers

The performance of the first diode-pumped Yb{sup 3+}-doped Sr{sub 5}(PO{sub 4}){sup 3}F (Yb:S-FAP) solid-state laser is discussed. An InGaAs diode array has been fabricated that has suitable specifications for pumping a 3 x 3 x 30 mm Yb:S-FAP rod. The saturation fluence for diode pumping was deduced to be 5.5 J/cm{sup 2} for the particular 2.8 kW peak power diode array utilized in the studies. This is 2.5{times} higher than the intrinsic 2.2 J/cm{sup 2} saturation fluence as is attributed to the 6.5 nm bandwidth of the diode pump array. The small signal gain is consistent with the previously measured emission cross section of 6.0 {times} 10{sup {minus}20} cm{sup 2}, obtained from a narrowband-laser pumped gain experiment. Up to 1.7 J/cm{sup 3} of stored energy density was achieved in a 6 x 6 x 44 mm Yb:S-FAP amplifier rod. In a free running configuration, diode-pumped slope efficiencies up to 43% (laser output energy/absorbed pump energy) were observed with output energies up to {approximately}0.5 J per 1 ms pulse. When the rod was mounted in a copper block for cooling, 13 W of average power was produced with power supply limited operation at 70 Hz with 500 {micro}s pulses.

DOE Contract Number:
W-7405-ENG-48
OSTI ID:
231094
Journal Information:
IEEE Journal of Quantum Electronics, Vol. 32, Issue 4; Other Information: PBD: Apr 1996
Country of Publication:
United States
Language:
English