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Title: Diode-pumped Yb:Sr{sub 5}(PO{sub 4}){sub 3}F laser performance

Conference ·
OSTI ID:110729

The performance of the first diode-pumped Yb{sup 3+}-doped Sr{sub 5}(PO{sub 4}){sub 3}F (Yb:S-FAP) laser is discussed. We found the pumping dynamics and extraction cross-sections of Yb:S-FAP crystals to be similar to those previously inferred by purely spectroscopic techniques. The saturation fluence for pumping was measured to be 2.2 J/cm{sup 2} using three different methods based on either the spatial, temporal, or energy transmission properties of a Yb:S-FAP rod. The small signal gain implies an emission cross section of 6.0 x 10{sup -20} cm{sup 2} that falls within error bars of the previously reported value of 7.3 x 10{sup -20} cm{sup 2}, obtained from spectroscopic techniques. Up to 1.7 J/cm{sup 3} of stored energy density was achieved in a 6 x 6 x 44 mm Yb:S-FAP amplifier rod. An InGaAs diode array has been fabricated that has suitable specifications for pumping a 3 x 3 x 30 mm Yb:S-FAP rod. In a free running configuration diode-pumped slope efficiencies up to 43% were observed with output energies up to {approximately}0.5 J per 1 ms pulse. When the rod was mounted in a copper block for cooling, 13 W of average power was produced with power supply limited operation at 70 Hz and 500 {mu}s pulses.

Research Organization:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Sponsoring Organization:
USDOE, Washington, DC (United States)
DOE Contract Number:
W-7405-ENG-48
OSTI ID:
110729
Report Number(s):
UCRL-JC-118194; CONF-950101-9; ON: DE96000096; TRN: 95:022059
Resource Relation:
Conference: Advanced solid-state laser conference, Memphis, TN (United States), 29 Jan - 1 Feb 1995; Other Information: PBD: 17 Mar 1995
Country of Publication:
United States
Language:
English