Yb:FAP and related materials, laser gain medium comprising same, and laser systems using same
Patent
·
OSTI ID:869131
- Pleasanton, CA
- Castro Valley, CA
- Livermore, CA
- Salida, CA
An ytterbium doped laser material remarkably superior to all others, including Yb:YAG, comprises Ytterbium doped apatite (Yb:Ca.sub.5 (PO.sub.4).sub.3 F) or Yb:FAP, or ytterbium doped crystals that are structurally related to FAP. The new laser material is used in laser systems pumped by diode pump sources having an output near 0.905 microns or 0.98 microns, such as InGaAs and AlInGaAs, or other narrowband pump sources near 0.905 microns or 0.98 microns. The laser systems are operated in either the conventional or ground state depletion mode.
- Research Organization:
- Lawrence Livermore National Laboratory (LLNL), Livermore, CA
- DOE Contract Number:
- W-7405-ENG-48
- Assignee:
- United States Department of Energy (Washington, DC)
- Patent Number(s):
- US 5280492
- OSTI ID:
- 869131
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
/372/
905
98
alingaas
apatite
comprises
comprising
conventional
crystals
depletion
diode
diode pump
doped
doped laser
fap
ground
including
ingaas
laser
laser material
laser systems
material
materials
medium
medium comprising
microns
mode
narrowband
near
operated
output
pump
pump source
pump sources
pumped
related
related materials
remarkably
sources
structurally
structurally related
superior
systems
yag
ytterbium
ytterbium doped
905
98
alingaas
apatite
comprises
comprising
conventional
crystals
depletion
diode
diode pump
doped
doped laser
fap
ground
including
ingaas
laser
laser material
laser systems
material
materials
medium
medium comprising
microns
mode
narrowband
near
operated
output
pump
pump source
pump sources
pumped
related
related materials
remarkably
sources
structurally
structurally related
superior
systems
yag
ytterbium
ytterbium doped