Error analysis and prevention of cosmic ion-induced soft errors in static CMOS RAMS
Conference
·
OSTI ID:5183679
Cosmic ray interactions with memory cells are known to cause temporary, random, bit errors in some designs. The sensitivity of polysilicon gate CMOS static RAM designs to logic upset by impinging ions has been studied using computer simulations and experimental heavy ion bombardment. Results of the simulations are confirmed by experimental upset cross-section data. Analytical models have been extended to determine and evaluate design modifications which reduce memory cell sensitivity to cosmic ions. A simple design modification, the addition of decoupling resistance in the feedback path, is shown to produce static RAMs immune to cosmic ray-induced bit errors.
- Research Organization:
- Auburn Univ., AL (USA). Dept. of Electrical Engineering; Sandia Labs., Albuquerque, NM (USA); Aerospace Corp., Los Angeles, CA (USA). Space Sciences Lab.
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 5183679
- Report Number(s):
- SAND-82-0723C; CONF-820708-6; ON: DE82018967
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CAPACITANCE
CHARGED PARTICLES
COSMIC NUCLEI
COSMIC RADIATION
CROSS SECTIONS
ELECTRIC CHARGES
ELECTRICAL PROPERTIES
ELECTRONIC CIRCUITS
ELEMENTS
ERRORS
HEAVY IONS
IONIZING RADIATIONS
IONS
LOGIC CIRCUITS
MEMORY DEVICES
MOS TRANSISTORS
NUCLEI
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATIONS
RADIOSENSITIVITY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR STORAGE DEVICES
SEMIMETALS
SILICON
SIMULATION
TRANSISTORS
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CAPACITANCE
CHARGED PARTICLES
COSMIC NUCLEI
COSMIC RADIATION
CROSS SECTIONS
ELECTRIC CHARGES
ELECTRICAL PROPERTIES
ELECTRONIC CIRCUITS
ELEMENTS
ERRORS
HEAVY IONS
IONIZING RADIATIONS
IONS
LOGIC CIRCUITS
MEMORY DEVICES
MOS TRANSISTORS
NUCLEI
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATIONS
RADIOSENSITIVITY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR STORAGE DEVICES
SEMIMETALS
SILICON
SIMULATION
TRANSISTORS