Performance of a double-sided silicon microstrip detector with a wide-pitch N-side readout using a field-plate and a multi P-stop structure
Conference
·
OSTI ID:512966
- Seiko Instruments Inc., Chiba (Japan); and others
The previous prototype of the double-sided silicon microstrip detectors (DSSDs) with integrated coupling capacitors formed by oxide-nitride-oxide (ONO) dielectric film showed band-to-band tunneling (BBT) current at the field-plate structure for the N{sup +} strip, which represented a limitation to the biasing configuration. We report improved characteristics of the modified field-plate structure and the wide-pitch n-side readout using a multi p-stop structure combined thereon.
- OSTI ID:
- 512966
- Report Number(s):
- CONF-961123--
- Country of Publication:
- United States
- Language:
- English
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