Fabrication of a double-sided silicon microstrip detector with an ONO capacitor dielectric film

Journal Article · Sat Jun 01 00:00:00 EDT 1996 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/23.506649· OSTI ID:277624

Saitoh, Y; Akamine, T; Inoue, M ^[1]

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1. Seiko Instruments Inc., Matsudo, Chiba (Japan); and others

A silicon vertex detector (SVD) for a KEK B-factory experiment (BELLE collaboration) consisting of detector units assembled by the FCB method, and arranged in a superlayer structure, will be constructed. The double-sided silicon microstrip detectors (DSSDs) to be used in the detector units will have bump electrodes and require the same high quality as in other HEP experiments. Here, DSSDs with integrated coupling capacitors formed by an oxide-nitride-oxide (ONO) dielectric film were fabricated using newly developed processing techniques. They report on the processing techniques and some characteristics of the detectors fabricated in the above process.

• OSTI ID: 277624
• Report Number(s): CONF-951073--
• Journal Information: IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 3Pt2 Vol. 43; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

43 PARTICLE ACCELERATORS
44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
DESIGN
DIELECTRIC MATERIALS
FABRICATION
MESON FACTORIES
SI SEMICONDUCTOR DETECTORS
SILICON NITRIDES
SILICON OXIDES