An oxide-nitride-oxide capacitor dielectric film for silicon strip detectors

Journal Article · Tue Aug 01 04:00:00 EDT 1995 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/23.467808· OSTI ID:129161

Holland, S ^[1]

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1. Lawrence Berkeley Lab., CA (United States)

Silicon strip detectors with integrated coupling capacitors were fabricated on the same wafer with capacitor test structures an/d dielectric breakdown characteristics were evaluated. The standard silicon dioxide (oxide) dielectric was compared to a stacked film of silicon dioxide0silicon nitride-silicon dioxide (ONO). The thickness for the stacked film were chosen to give approximately the same value of capacitance per unit area as for the oxide. Since the dielectric constant of silicon nitride is approximately twice that of silicon dioxide, the ONO film can be made thicker than the corresponding oxide for the same capacitance. As a result the ONO film has a significantly higher breakdown voltage than that of an oxide film with equivalent capacitance.

• DOE Contract Number: AC03-76SF00098
• OSTI ID: 129161
• Report Number(s): CONF-941061--
• Journal Information: IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 4Pt1 Vol. 42; ISSN IETNAE; ISSN 0018-9499
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
CAPACITORS
DESIGN
DIELECTRIC MATERIALS
DIELECTRIC PROPERTIES
ELECTRIC POTENTIAL
EXPERIMENTAL DATA
SI SEMICONDUCTOR DETECTORS