Accelerated life test of an ONO stacked insulator film for a silicon micro-strip detector

Conference · Tue Dec 31 04:00:00 EST 1996

OSTI ID:513048

Okuno, Shoji ^[1]; Ikeda, Hirokazu ^[2]; Saitoh, Yutaka ^[3]

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1. Kanagawa Univ., Yokohama (Japan)
2. National Lab. for High Energy Physics, Ibaraki (Japan)
3. Seiko Instruments Inc., Chiba (Japan); and others

We have used to acquire the signal through an integrated capacitor for a silicon micro-strip detector. When we have been using a double-sided silicon micro-strip detector, we have required a long-term stability and a high feasibility for the integrated capacitor. An oxide-nitride-oxide (ONO) insulator film was theoretically expected to have a superior nature in terms of long term reliability. In order to test long term reliability for integrated capacitor of a silicon micro-strip detector, we made a multi-channel measuring system for capacitors.

• OSTI ID: 513048
• Report Number(s): CONF-961123--
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
BREAKDOWN
CAPACITORS
ELECTRICAL INSULATORS
MESON FACTORIES
PREAMPLIFIERS
SI SEMICONDUCTOR DETECTORS
TESTING