The need for a wholistic design approach
Advances in the development of digital GaAs ICs have progressed to the point that designers of signal and data processors and of analog conversion modules can begin to discern the systems applications for which they are best suited. The high electron mobilities of GaAs transistors result in very fast electron transit times across their active regions and hence generate the potential for extremely short gate propagation delays. So-called first-generation GaAs gates using FET structure (both depletion-mode MESFETs, or D-MESFETs and enhancement-mode junction FETs, or EJFETs) similar to those fabricated in silicon have exhibited switching delays as low as 100ps at 1-3 mW power dissipation. First-generation GaAs components that have been manufactured at reasonable yield levels are currently in the 1000-2000 gate range, with components of 5000-6000 gate density presently in development and demonstration.
- Research Organization:
- Mayo Clinic, Rochester, MN 55905
- OSTI ID:
- 5128017
- Journal Information:
- Computer; (United States), Journal Name: Computer; (United States) Vol. 19:1; ISSN CPTRB
- Country of Publication:
- United States
- Language:
- English
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ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ANALOG SYSTEMS
ARSENIC COMPOUNDS
ARSENIDES
CIRCUIT THEORY
COMPUTER ARCHITECTURE
COMPUTERS
DATA PROCESSING
DESIGN
DIGITAL COMPUTERS
ELECTRICAL PROPERTIES
ELECTRON MOBILITY
ELECTRONIC CIRCUITS
ELEMENTS
ENERGY LOSSES
FIELD EFFECT TRANSISTORS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GATING CIRCUITS
HETEROJUNCTIONS
INTEGRATED CIRCUITS
JUNCTIONS
LOSSES
LOW TEMPERATURE
MATERIALS TESTING
MEMORY DEVICES
MICROELECTRONIC CIRCUITS
MOBILITY
PARTICLE MOBILITY
PHYSICAL PROPERTIES
PNICTIDES
POWER LOSSES
PROCESSING
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
SIGNALS
SILICON
TEMPERATURE EFFECTS
TESTING
TRANSISTORS