Comparison of GaAs JFETs to MESFETs for high-temperature operation
- Sandia National Labs., Albuquerque, NM (United States)
- Microwave Signal, Inc., Clarksburg, MD (United States)
GaAs-based Metal Semiconductor Field Effect transistors (MESFETs) and High Electron Mobility Transistors (HEMTs) have been the focus of research for high-temperature operation due to the 1.42 eV band gap of GaAs that reduces thermal carrier generation as compared to 1.1 eV silicon-based electronics. Although schemes have been proposed to minimize substrate currents at elevated temperatures, high-temperature operation of these devices is ultimately limited by the gate leakage current of the Schottky gate contact. Since a Junction Field Effect Transistor (JFET) has a higher gate barrier to current flow than a Schottky barrier MESFET as a result of the p/n junction gate, JFETs should have superior performance at elevated temperatures. This paper compares the high-temperature performance of a self-aligned GaAs MESFET and JFET. Both devices suffer from substrate leakage at high temperature; however, the JFET has superior gate characteristics and maintains a larger fraction of its room temperature transconductance at 300 C.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 242664
- Report Number(s):
- SAND--96-1418C; CONF-9606159--6; ON: DE96011822
- Country of Publication:
- United States
- Language:
- English
Similar Records
An all-implanted, self-aligned, GaAs JFET with a nonalloyed W/p[sup +]-GaAs ohmic gate contact
High-frequency operation of 0.3 {mu}m GaAs JFETs for low-power electronic