Evaluation of thin Pd, Pt and Ni silicides Schottky barriers for silicon solar cells. Large area uniform growth of Si layer by solid phase epitaxy (II). Final report
The phase stability of silicides of Ni, Pt and Pd in contact with single crystal or amorphous silicon is examined. The presence of a particular silicide phase is identified by X-ray diffraction, and Rutherford backscattering is used to study composition. It is concluded that Pt or Pd silicides are suitable for Schottky barriers. Layers of silicon can be grown quickly by solid phase epitaxy at temperatures of 300-500C and using an intermediate metal film. Experimental results are reported. Doped layers have been obtained which have electrical characteristics suitable for the junctions in solar cells. The effects of impurities and orientation of the substrate on the growth kinetics are discussed.
- Research Organization:
- Commission of the European Communities, Luxembourg
- OSTI ID:
- 5121753
- Report Number(s):
- PB-82-192808; EUR-7096-EN
- Country of Publication:
- United States
- Language:
- English
Similar Records
Pt silicide/poly-Si Schottky diodes as temperature sensors for bolometers
Schottky barrier heights of Ni, Pt, Pd, and Au on n-type GaN
Related Subjects
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360603 -- Materials-- Properties
DIRECT ENERGY CONVERTERS
DOPED MATERIALS
ELEMENTS
EPITAXY
EQUIPMENT
IMPURITIES
MATERIALS
NICKEL COMPOUNDS
NICKEL SILICIDES
ORIENTATION
PALLADIUM COMPOUNDS
PALLADIUM SILICIDES
PHASE STABILITY
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PLATINUM COMPOUNDS
PLATINUM SILICIDES
SCHOTTKY BARRIER SOLAR CELLS
SEMIMETALS
SILICIDES
SILICON
SILICON COMPOUNDS
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT
STABILITY
SUBSTRATES
TRANSITION ELEMENT COMPOUNDS