Pt silicide/poly-Si Schottky diodes as temperature sensors for bolometers

Journal Article · Thu May 28 00:00:00 EDT 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4921595· OSTI ID:22410251

Chizh, K. V.; Chapnin, V. A.; Mironov, S. A.; Dubkov, V. P.; Uvarov, O. V.; Kalinushkin, V. P. ^[1]; Senkov, V. M. ^[2]; Nalivaiko, O. Y. ^[3]; Novikau, A. G.; Gaiduk, P. I. ^[4]

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1. A. M. Prokhorov General Physics Institute of the Russian Academy of Sciences, 38 Vavilov Street, Moscow 119991 (Russian Federation)
2. P. N. Lebedev Physical Institute of the Russian Academy of Sciences, 53 Leninskiy Avenue, Moscow 119991 (Russian Federation)
3. JSC “Integral” – “Integral” Holding Management Company, 121A, Kazintsa I. P. Street, Minsk 220108 (Belarus)
4. Belarusian State University, 4 Nezavisimosti Avenue, 220030 Minsk (Belarus)

Platinum silicide Schottky diodes formed on films of polycrystalline Si doped by phosphorus are demonstrated to be efficient and manufacturable CMOS-compatible temperature sensors for microbolometer detectors of radiation. Thin-film platinum silicide/poly-Si diodes have been produced by a CMOS-compatible process on artificial Si{sub 3}N{sub 4}/SiO{sub 2}/Si(001) substrates simulating the bolometer cells. Layer structure and phase composition of the original Pt/poly-Si films and the Pt silicide/poly-Si films synthesized by a low-temperature process have been studied by means of the scanning transmission electron microscopy; they have also been explored by means of the two-wavelength X-ray structural phase analysis and the X-ray photoelectron spectroscopy. Temperature coefficient of voltage for the forward current of a single diode is shown to reach the value of about −2%/ °C in the temperature interval from 25 to 50 °C.

• OSTI ID: 22410251
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 20 Vol. 117; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BOLOMETERS
DOPED MATERIALS
LAYERS
PHASE STUDIES
PLATINUM SILICIDES
POLYCRYSTALS
SCHOTTKY BARRIER DIODES
SENSORS
SILICON
SILICON NITRIDES
SILICON OXIDES
SUBSTRATES
TEMPERATURE COEFFICIENT
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY
X-RAY PHOTOELECTRON SPECTROSCOPY