Doping silver into YBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} films by 800 keV Ag{sup +} implantation at room temperature and elevated temperatures
- Texas Center for Superconductivity, University of Houston, Houston, Texas 77204-5932 (United States)
Thin films ({approximately}0.43 and {approximately}0.95{mu}m thick) of YBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} on (100) LaAlO{sub 3} substrates have been implanted with 800 keV Ag{sup +} to a dose of 5{times}10{sup 14}/cm{sup 2}, at room temperature (i.e., the total range {approx}0.4{mu}m and the damage level {approx}3.1 displacements per atom) and at elevated temperatures (450, 650, and 780{degree}C), followed by an {ital in situ} annealing schedule in flowing oxygen ambient. We have found that the implantation at room temperature amorphizes the implanted layer. In such a case, the implanted layer cannot regrow to the superconducting phase if there is no crystal seed remaining in the bottom of the film, whereas implantation at elevated temperatures plus an {ital in situ} annealing schedule, including a step at 870{degree}C in flowing oxygen ambient, can maintain the crystal structure and superconductivity of the films. For the thicker film, we have found that after the implantation at 450 or 650{degree}C and the {ital in situ} annealing, the total volume of the film has recovered to the superconducting 123 phase with a T{sub c}=89K. {copyright} {ital 1997 American Institute of Physics.}
- OSTI ID:
- 508928
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 22 Vol. 70; ISSN 0003-6951; ISSN APPLAB
- Country of Publication:
- United States
- Language:
- English
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