AlGaAs-GaAs patterned Ge tunnel junction cascade concentrator solar cell. Annual technical progress report, 15 October 1983-14 December 1984

Technical Report · Thu Aug 01 04:00:00 EDT 1985

DOI:https://doi.org/10.2172/5051200· OSTI ID:5051200

The goal of this research is to demonstrate a two-junction cascade solar cell, 0.5 cm/sup 2/ in area, in the AlGaAs-GaAs material system that has a power conversion efficiency of more than 30% at a cell temperature of 50/sup 0/C. Objectives for the first year of the program included growth of Al/sub x/Ga/sub 1-x/As on Al/sub y/Ga/sub 1-y/As exposed to air for at least one hour; growth of Ge by vapor phase epitaxy on a GaAs substrate; fabrication of a p/n patterned Ge tunnel junction grown on n-GaAs and demonstration of a current density larger than 80 A/cm/sup 2/; growth and characterization of a top cell on a patterned Ge tunnel junction; and fabrication and demonstration of an AlGaAs-GaAs cascade solar cell using the patterned Ge tunnel junction. A patterned Ge-tunnel junction connecting the n-type base region of a GaAs cell to a p/sup +/-GaAs substrate was demonstrated for the first time.

• Research Organization: Research Triangle Inst., Research Triangle Park, NC (USA)
• DOE Contract Number: AC02-83CH10093
• OSTI ID: 5051200
• Report Number(s): SERI/STR-211-2755; ON: DE85016856
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CASCADE SOLAR CELLS
CONCENTRATOR SOLAR CELLS
CRYSTAL GROWTH
DIRECT ENERGY CONVERTERS
EFFICIENCY
ELEMENTS
EQUIPMENT
ETCHING
GALLIUM ARSENIDE SOLAR CELLS
GERMANIUM
METALS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SOLAR CELLS
SOLAR EQUIPMENT
SURFACE FINISHING
TUNNEL DIODES