AlGaAs-GaAs patterned Ge tunnel junction cascade concentrator solar cell. Annual subcontract report, 15 October 1984-14 October 1985

Technical Report · Thu May 01 04:00:00 EDT 1986

DOI:https://doi.org/10.2172/5749855· OSTI ID:5749855

The long-term goal of this research was to demonstrate a two-junction cascade solar cell (0.5 cm/sup 2/) composed of AlGaAs-GaAs having an AM2 conversion efficiency of more than 30%. As part of this work, Si has been selected as the best n-type dopant to date, and Mg, the best p-type dopant. B-doped, p/sup +/-Ge epilayers have been grown with mirror-like surface morphologies and hole concentrations above 10/sup 20/ cm/sup -3/. Intercell ohmic connections have been fabricated using n/sup +/-GaAs/p/sup +/-Ge/p/sup +/-GaAs sandwiched structures. GaAs bottom cells having mirror-like surface morphologies have been grown with efficiencies of 8 to 12%. Al/sub x/Ga/sub 1-x/As top cells have also been obtained, but no satisfactory photovoltaic action has yet been measured. A complete Al/sub x/Ga/sub 1-x/As/GaAs cascade cell using the patterned n/sup +/-GaAs/p/sup +/-Ge/p/sup +/-GaAs sandwiched 10C has also been fabricated.

• Research Organization: Research Triangle Inst., Research Triangle Park, NC (USA)
• DOE Contract Number: AC02-83CH10093
• OSTI ID: 5749855
• Report Number(s): SERI/STR-211-2932; ON: DE86010699
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ALKALINE EARTH METALS
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CASCADE SOLAR CELLS
CONCENTRATOR SOLAR CELLS
CRYSTAL DOPING
DIRECT ENERGY CONVERTERS
ELEMENTS
EQUIPMENT
GALLIUM ARSENIDE SOLAR CELLS
GERMANIUM
HETEROJUNCTIONS
JUNCTIONS
MAGNESIUM
METALS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PNICTIDES
RESEARCH PROGRAMS
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
SILICON
SOLAR CELLS
SOLAR EQUIPMENT