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Deposition of amorphous silicon solar cells at high rates by glow discharge of disilane. Final subcontract report, January 1985-July 1986

Technical Report ·
DOI:https://doi.org/10.2172/5050928· OSTI ID:5050928
This report summarizes the results of recent a-Si:H thin-film photovoltaic (PV) materials research. The work reported here concerned the fabrication of a-Si:H solar cells at high deposition rates using disilane. This task required the construction of a new, dual-chamber deposition system to control the dopant profile between the heavily doped p-type layer and the undoped (intrinsic) layer in the solar cell structure. Conditions were sought that would produce high-quality films at a high deposition rate. Complete photovoltaic devices were fabricated. In disilane-deposited material, the optimum substrate temperature is much higher than in silane material, presumably because it is harder to eliminate the excess hydrogen in the former. The efficiency of the best disilane cell was about 7%, with an open-circuit voltage of 0.80 V, a short-circuit current density of 14.7 mA cm/sup -2/ and a fill factor of 0.59. The most likely area for improvement is in the voltage, where values as high as 0.9 V should be possible with careful adjustment of the cell structure.
Research Organization:
Brookhaven National Lab., Upton, NY (USA)
DOE Contract Number:
AC02-83CH10093
OSTI ID:
5050928
Report Number(s):
SERI/STR-211-3016; ON: DE86014514
Country of Publication:
United States
Language:
English