Scanning tunneling microscopy studies of Si donors (Si[sub Ga]) in GaAs

Journal Article · Mon Mar 07 00:00:00 EST 1994 · Physical Review Letters; (United States)

DOI:https://doi.org/10.1103/PhysRevLett.72.1490· OSTI ID:5045365

Zheng, J F; Liu, X; Newman, N; Weber, E R; Ogletree, D F; Salmeron, M ^[1]

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1. Department of Materials Science, University of California at Bekeley, Berkeley, California 94720 (United States) Materials Science Division, Lawrence Berkeley Laboratory, Berkeley, California 94720 (United States)

We report scanning tunneling microscopy (STM) studies of Si substitutional donors (Si[sub Ga]) in GaAs that reveal delocalized and localized electronic features corresponding to Si[sub Ga] in the top few layers of the (110) cleavage surface. The delocalized features appear as protrusions a few nm in size, superimposed on the background lattice. These features are attributed to enhanced tunneling due to the local perturbation of the band bending by the Coulomb potential of subsurface Si[sub Ga]. In contrast, STM images of surface Si[sub Ga] show very localized electronic structures, in good agreement with a recent theoretical prediction [J. Wang [ital et] [ital al]., Phys. Rev. B 47, 10 329 (1993)].

• DOE Contract Number: AC03-76SF00098
• OSTI ID: 5045365
• Journal Information: Physical Review Letters; (United States), Vol. 72:10; ISSN 0031-9007
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GALLIUM ARSENIDES
SILICON ADDITIONS
CRYSTAL DOPING
ELECTRON MICROSCOPY
ELECTRONIC STRUCTURE
MICROSTRUCTURE
SUBSURFACE STRUCTURES
SURFACE PROPERTIES
TUNNELING
ALLOYS
ARSENIC COMPOUNDS
ARSENIDES
GALLIUM COMPOUNDS
MICROSCOPY
PNICTIDES
SILICON ALLOYS
360606* - Other Materials- Physical Properties- (1992-)