Resistance changes induced by electron-spin resonance in ion-implanted Si : P system

Journal Article · Sat Apr 01 04:00:00 EST 1978 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.325081· OSTI ID:5002696

Murakami, K; Namba, S; Kishimoto, N; Masuda, K; Gamo, K

The ESR-induced changes in the dc resistance, ..delta..rho/rhovertical-bar/sub ESR/, of P-ion-implanted silicon have been observed for the first time. The transfer of absorbed Zeeman energy at liquid-He temperature has been investigated. The ..delta..rho/rhovertical-bar/sub ESR/ signals observed were a narrow line with a g value of 1.9988 for light-dose implantation and a new broad line with a little larger g value for heavy-dose implantation. The line shape of these ..delta..rho/rhovertical-bar/sub ESR/ signals was Lorentzian as well as the ESR signal, but the linewidth ..delta..H/sub 1/2/ of the broad ..delta..rho/rhovertical-bar/sub ESR/ signal was about 10 times as broad as the ESR linewidth. It is suggested that the anomalously broad line of ..delta..rho/rhovertical-bar/sub ESR/ originates from the transfer of the Zeeman energy absorbed by the localized donor electrons at the tail regions with low donor concentration (5 x 10/sup 17/ or approx. =2 x 10/sup 19/ P/cm/sup 3/) which act as Zeeman energy absorbers.

• Research Organization: The Institute of Physical and Chemical Research, Wako-shi, Saitama, Japan
• OSTI ID: 5002696
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 49:4; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ATOMIC IONS
CHARGED PARTICLES
DOSE-RESPONSE RELATIONSHIPS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTRON SPIN RESONANCE
ELEMENTS
ENERGY TRANSFER
ION IMPLANTATION
IONS
LINE WIDTHS
MAGNETIC RESONANCE
PHOSPHORUS IONS
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RESONANCE
SEMIMETALS
SILICON