Electron spin resonance in silicon amorphized by ion implantation
The method of continuous saturation was used to study the broadening of ESR lines of paramagnetic defects with g = 2.0055 which appeared in silicon after implantation of Ar/sup +/ and As/sup +/ ions of E = 100 keV energy in doses D = 3 x 10/sup 12/--3 x 10/sup 15/ cm/sup -2/. Measurements were made of the contributions of the homogeneous (..delta..H/sub s/) and inhomogeneous components to the total width ..delta..H/sub p/p of the ESR lines, of the spin--lattice relaxation time, and of the average concentration of defects as a function of the implanted-ion dose. It was concluded that the reason for the inhomogeneous ESR line broadening in silicon amorphized by ion implantation was a ''polycrystalline'' distribution of the individual amorphous regions, the ESR lines of which provided the homogeneous contribution to ..delta..H/sub p/p. The nature of broadening of the ESR lines and the relative contribution of ..delta..H/sub s/ to ..delta..H/sub p/p were closely related to a gradual disordering of the crystal lattice and formation of an amorphous layer on increase in the implanted-ion dose D.
- Research Organization:
- Institute of Semiconductors, Academy of Sciences of the Ukrainian SSR, Kiev
- OSTI ID:
- 5787958
- Journal Information:
- Sov. Phys. - Semicond. (Engl. Transl.); (United States), Journal Name: Sov. Phys. - Semicond. (Engl. Transl.); (United States) Vol. 19:2; ISSN SPSEA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360605* -- Materials-- Radiation Effects
AMORPHOUS STATE
ARGON IONS
ARSENIC IONS
CHARGED PARTICLES
DOSE RATES
ELECTRON SPIN RESONANCE
ELEMENTS
ENERGY RANGE
ION IMPLANTATION
IONS
KEV RANGE
KEV RANGE 10-100
LINE BROADENING
MAGNETIC RESONANCE
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RELAXATION
RESONANCE
SATURATION
SEMIMETALS
SILICON
SPIN-LATTICE RELAXATION