Magnetic ordering in crystalline Si implanted with Co ions with intermediate doses
- Belarussian State University (Belarus)
Crystalline Si implanted with the 380-keV cobalt ions with the dose {phi} = 10{sup 14}-10{sup 16} cm{sup -2} is studied. The method of Rutherford backscattering is used to determine the Si amorphization threshold ({phi} = 3 x 10{sup 14} cm{sup -2}). A quasi-resonance anisotropic line with a width of approximately 170 mT is observed at a temperature of T = 78 K in the spectrum of the electron spin resonance of silicon implanted with Co{sup +} ions with {phi} {>=} 3 x 10{sup 14}) cm{sup -2}. A resonance signal of paramagnetic centers in amorphous Si regions (g = 2.0057 and {delta}B = 0.74 mT) is observed against the background of the above line. A quasi-resonance line of the electron spin resonance related to Co atoms and intrinsic Si defects was not observed at T = 300 K.
- OSTI ID:
- 21088651
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 10 Vol. 40; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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