Amorphization processes in ion implanted Si: Ion species effects

Journal Article · Mon Dec 21 00:00:00 EST 1992 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.108017· OSTI ID:6957141

Motooka, T ^[1]; Holland, O W ^[2]

---

1. Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305 (Japan)
2. Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)

Amorphization processes in Si[sup +], P[sup +], Ge[sup +], and As[sup +] ion implanted Si have been investigated using Raman spectroscopy and Rutherford backscattering spectrometry combined with computer simulations of the initial ion-beam-induced damage profiles. The crystal Si Raman peak at 520 cm[sup [minus]1] decreased, broadened, and shifted toward lower wave numbers as the doses were increased from 2 to 8[times]10[sup 14] cm[sup [minus]2] for both 100 keV Si[sup +] and P[sup +], and from 0.6 to 1.8[times]10[sup 14] cm[sup [minus]2] for both 175 keV Ge[sup +] and As[sup +]. The maximum peak shifts prior to amorphization were [similar to][minus]6 cm[sup [minus]1] in all the samples suggesting that lattice softening is responsible for amorphization in all the ion species cases. The effects of ion species were analyzed by scaling the ion dose using calculated displacements per target atom (DPA). It was found that larger DPA was necessary to obtain the same peak shifts in the Si[sup +] and P[sup +] than in the Ge[sup +] and As[sup +] implantation cases. The results suggest that amorphization is controlled by divacancies generated by ion bombardment.

• DOE Contract Number: AC05-84OR21400
• OSTI ID: 6957141
• Journal Information: Applied Physics Letters; (United States), Vol. 61:25; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SILICON
PHYSICAL RADIATION EFFECTS
AMORPHOUS STATE
ARSENIC IONS
COMPUTERIZED SIMULATION
DEFECTS
GERMANIUM IONS
ION IMPLANTATION
PHOSPHORUS IONS
RAMAN SPECTROSCOPY
SILICON IONS
VACANCIES
CHARGED PARTICLES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELEMENTS
IONS
LASER SPECTROSCOPY
POINT DEFECTS
RADIATION EFFECTS
SEMIMETALS
SIMULATION
SPECTROSCOPY
360605* - Materials- Radiation Effects
360602 - Other Materials- Structure & Phase Studies