Amorphization processes in ion implanted Si: Ion species effects

Journal Article · Mon Dec 21 04:00:00 EST 1992 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.108017· OSTI ID:6957141

Motooka, T ^[1]; Holland, O W ^[2]

---

1. Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305 (Japan)
2. Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)

Amorphization processes in Si[sup +], P[sup +], Ge[sup +], and As[sup +] ion implanted Si have been investigated using Raman spectroscopy and Rutherford backscattering spectrometry combined with computer simulations of the initial ion-beam-induced damage profiles. The crystal Si Raman peak at 520 cm[sup [minus]1] decreased, broadened, and shifted toward lower wave numbers as the doses were increased from 2 to 8[times]10[sup 14] cm[sup [minus]2] for both 100 keV Si[sup +] and P[sup +], and from 0.6 to 1.8[times]10[sup 14] cm[sup [minus]2] for both 175 keV Ge[sup +] and As[sup +]. The maximum peak shifts prior to amorphization were [similar to][minus]6 cm[sup [minus]1] in all the samples suggesting that lattice softening is responsible for amorphization in all the ion species cases. The effects of ion species were analyzed by scaling the ion dose using calculated displacements per target atom (DPA). It was found that larger DPA was necessary to obtain the same peak shifts in the Si[sup +] and P[sup +] than in the Ge[sup +] and As[sup +] implantation cases. The results suggest that amorphization is controlled by divacancies generated by ion bombardment.

• DOE Contract Number: AC05-84OR21400
• OSTI ID: 6957141
• Journal Information: Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 61:25; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602 -- Other Materials-- Structure & Phase Studies
360605* -- Materials-- Radiation Effects
AMORPHOUS STATE
ARSENIC IONS
CHARGED PARTICLES
COMPUTERIZED SIMULATION
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DEFECTS
ELEMENTS
GERMANIUM IONS
ION IMPLANTATION
IONS
LASER SPECTROSCOPY
PHOSPHORUS IONS
PHYSICAL RADIATION EFFECTS
POINT DEFECTS
RADIATION EFFECTS
RAMAN SPECTROSCOPY
SEMIMETALS
SILICON
SILICON IONS
SIMULATION
SPECTROSCOPY
VACANCIES