Amorphization processes in self-ion-implanted Si: Dose dependence

Journal Article · Mon May 27 04:00:00 EDT 1991 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.104871· OSTI ID:5616963

Motooka, T ^[1]; Holland, O W ^[2]

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1. Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305, Japan (JP)
2. Solid State Divsion, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (USA)

The structural transformation in self-ion-implanted Si has been investigated using Raman spectroscopy and Rutherford backscattering spectrometry. The crystal Si Raman peak at 520 cm{sup {minus}1} decreased, broadened, and shifted toward lower wave numbers as the 100 keV Si{sup +} dose was increased from 0.8 to 8.5{times}10{sup 14} cm{sup {minus}2}. These peak shifts can be attributed to uniaxial lattice expansion in the direction normal to the Si surface and they are substantially larger than those predicted in uniaxially strained crystal Si. The results suggest that accumulated defects generated by ion bombardment not only expand the crystal Si lattice but also reduce the force constant which in turn increases plasticity and finally gives rise to amorphization of the Si lattice.

• DOE Contract Number: AC05-84OR21400
• OSTI ID: 5616963
• Journal Information: Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 58:21; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure & Phase Studies
360605 -- Materials-- Radiation Effects
CRYSTALLIZATION
ELEMENTS
ION IMPLANTATION
LASER SPECTROSCOPY
NATIONAL ORGANIZATIONS
ORNL
PHASE TRANSFORMATIONS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RAMAN SPECTROSCOPY
SEMIMETALS
SILICON
SPECTROSCOPY
US AEC
US DOE
US ERDA
US ORGANIZATIONS