Specific features of transmutational doping of {sup 30}Si-enriched silicon crystals with phosphorus: Studies by the method of electron spin resonance

Journal Article · Tue Aug 15 04:00:00 EDT 2006 · Semiconductors

DOI:https://doi.org/10.1134/S1063782606080082· OSTI ID:21088494

Baranov, P G; Ber, B Ya ^[1]; Godisov, O N ^[2]; Ionov, A N ^[1]; Kaliteevskii, A K ^[2]; Kaliteevskii, M A ^[1]; Lazebnik, I M ^[3]; Safronov, A Yu ^[2]; Pohl, H -J ^[4]; Riemann, H; Abrosimov, N V ^[5]; Kop'ev, P S ^[1]; Bulanov, A D; Gusev, A V ^[6]

---

1. Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)
2. Centrotech Research Center (Russian Federation)
3. Konstantinov Institute of Nuclear Physics (Russian Federation)
4. VITCON Projectconsult Gmbh (Germany)
5. Leibniz Institute of Crystal Growth (Germany)
6. Russian Academy of Sciences, Institute of Chemistry of High-Purity Substances (Russian Federation)

Electron spin resonance (ESR) is used to study the neutron transmutation doping of silicon crystals enriched with {sup 30}Si isotope: phosphorus donors and radiation defects produced in the course of transmutational doping are observed. The ESR signals related to the phosphorus uncontrolled impurity in {sup 30}Si before transmutational doping (the P concentration is {approx}10{sup 15} cm{sup -3}) and phosphorus introduced by neutron irradiation with doses {approx}1 x 10{sup 19} cm{sup -2} and {approx}1 x 10{sup 20} cm{sup -2} (the P concentrations are {approx}5 x 10{sup 16} and {approx}7 x 10{sup 17} cm{sup -3}, respectively) are studied. As a result of drastic narrowing of the phosphorus ESR lines in {sup 30}Si, the intensity of lines increased appreciably, which made it possible to measure the phosphorus concentration in the samples with a small volume (down to 10{sup -6} mm{sup -3}). The methods for determining the concentration of P donors from hyperfine structure in the ESR spectra of isolated P atoms, exchange-related pairs, and clusters that consist of three, four, and more P donors are developed. In the region of high concentrations of P donors, in which case the hyperfine structure disappears, the concentration of P donors was estimated from the exchange-narrowed ESR line.

• OSTI ID: 21088494
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 8 Vol. 40; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL DEFECTS
CRYSTALS
ELECTRON SPIN RESONANCE
HYPERFINE STRUCTURE
IMPURITIES
IRRADIATION
NEUTRON BEAMS
NEUTRONS
PHOSPHORUS
PHYSICAL RADIATION EFFECTS
RADIATION DOSES
SILICON
SILICON 30
TRANSMUTATION