Beryllium-ion implantation in InP and In/sub 1-x/Ga/sub x/As/sub y/P/sub 1-y/

Journal Article · Mon Jan 01 04:00:00 EST 1979 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.90573· OSTI ID:6510830

Donnelly, J P; Armiento, C A

Anneal temperatures > or =700 /sup 0/C are necessary to obtain maximum electrical activation of implanted Be in InP. At these temperatures, activation >50% is generally achievable. Both the implant temperature and implanted-Be concentration affect p-n junction depth and presumably, therefore, the in-diffusion of implanted Be. For room-temperature implants, the maximum Be concentration which showed insignificant in-diffusion was 3 x 10/sup 18/ cm/sup -3/. Using a multienergy implant schedule (highest energy 400 keV), which results in a flat as-implanted Be concentration of approx. =3 x 10/sup 18/ cm/sup -3/, sheet hole concentrations as high as 2.2 x 10/sup 14/ and 1.5 x 10/sup 14/ cm/sup -2/ have been obtained in InP and In/sub 0.75/Ga/sub 0.25/As/sub 0.52/P/sub 0.48/, respectively.

• Research Organization: Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173
• OSTI ID: 6510830
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 34:1; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
ATOMIC IONS
BERYLLIUM IONS
CHARGED PARTICLES
DIFFUSION
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HEAT TREATMENTS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
ION IMPLANTATION
IONS
JUNCTIONS
P-N JUNCTIONS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
SEMICONDUCTOR JUNCTIONS