Electrochemical profiling of ion-implanted InP

Journal Article · Tue Sep 01 04:00:00 EDT 1987 · J. Electrochem. Soc.; (United States)

DOI:https://doi.org/10.1149/1.2100849· OSTI ID:5554838

Bahir, G; Merz, J L; Abelson, J R; Sigmon, T W

A liquid barrier contact to InP utilizing HCl is described which may be used as a routine contact for the evaluation of carrier concentration profiles in ion implanted and annealed samples. The basic characteristics of the InP/HCl barrier were explored for undoped n-type material with carrier concentrations of 5 x 10/sup 15/ and 1.2 x 10/sup 16/ cm/sup -3/, and for S-doped n-type materials with 2 x 10/sup 17/, 2 x 10/sup 18/, and 10/sup 19/ electrons cm/sup -3/. The factors which influence the accuracy and the reproducibility of ion-implanted carrier concentration profiling utilizing this technique, in which the sample is dissolved by an electrolytic Schottky barrier to perform capacitance-voltage profile measurements, are critically examined. Attention is centered upon the capacitance contributions from the edge regions of the electrolyte contact area, and its influence on profile determination. It is shown that the carrier profile evaluation is very sensitive to a small amount of residual damage remaining after implantation and annealing. The possibility of using this technique to detect deep levels induced by the process of implantation and subsequent annealing is shown.

• Research Organization: Dept. of Electrical and Computer Engineering, Univ. of California, Santa Barbara, CA 93106
• OSTI ID: 5554838
• Journal Information: J. Electrochem. Soc.; (United States), Journal Name: J. Electrochem. Soc.; (United States) Vol. 134:9; ISSN JESOA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ANNEALING
CHARGE CARRIERS
CHEMISTRY
CRYSTAL DOPING
DISSOLUTION
DOPED MATERIALS
ELECTROCHEMISTRY
HEAT TREATMENTS
HYDROCHLORIC ACID
HYDROGEN COMPOUNDS
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INORGANIC ACIDS
ION EXCHANGE
MATERIALS
N-TYPE CONDUCTORS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR MATERIALS