Influence of Zr/Ti ratios on the deformation in the hysteresis loop of Pb(Zr,Ti)O{sub 3} thin film capacitors
- Department of Materials Science and Engineering, Chosun University, Kwangju 501-759 (Korea)
- IMEC, Kapeldreef 75, B-3001 Leuven (Belgium)
Electric field shift and deformation in the polarization-electric field characteristics of Pb(Zr,Ti)O{sub 3} (PZT) thin film capacitors with various Zr/Ti ratios have been studied as a function of the annealing temperature after patterning the top sputter-deposited Pt electrode using reactive ion etch with Ar gas. A large field shift and a constriction in the hysteresis loops are observed, particularly in low Zr/Ti PZT films annealed below 400{degree}C. A strong blocking layer effect in unannealed capacitor is found to be related to the internal field caused by trapped charges near electrodes. As the Zr/Ti ratio decreases, the field shift increases and the annealing temperature at which the internal field disappears also increases. {copyright} {ital 1997 American Institute of Physics.}
- OSTI ID:
- 496344
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 18 Vol. 70; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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