Ion implantation doping of OMCVD grown GaN

Journal Article · Sat Mar 01 04:00:00 EST 1997 · Journal of Electronic Materials

DOI:https://doi.org/10.1007/s11664-997-0174-9· OSTI ID:484473

Edwards, A; Rao, M V ^[1]; Molnar, B; Wickenden, A E ^[2]; Holland, O W ^[3]; Chi, P H ^[4]

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1. George Mason Univ., Fairfax, VA (United States)
2. Naval Research Lab., Washington, DC (United States)
3. Oak Ridge National Lab., TN (United States)
4. National Inst. of Standards and Technology, Gaithersburg, MD (United States)

Doping by ion implantation using Si, O, Mg, and Ca has been studied in single crystal semi-insulation and n-type GaN grown on {alpha}-sapphire substrates. The n- and p-type dopants used in this study are Si and O; Mg and Ca, respectively. Room temperature activation of Si and O donors has been achieved after 1150{degree}C annealing for 120 s. The activation of Mg and Ca acceptors is too low to measure at both room temperature and 300{degree}C. Using higher doses to achieve a measurable p-type conduction increases the amount of damage created by the implantation. Rutherford back scattering measurements on this material indicate that the damage is still present even after the maximum possible heat treatment. Secondary ion mass spectrometry measurements have indicated a redistribution in the measured profiles of Mg due to annealing. 34 refs., 5 figs., 2 tabs.

• Sponsoring Organization: USDOE
• DOE Contract Number: AC05-96OR22464
• OSTI ID: 484473
• Journal Information: Journal of Electronic Materials, Journal Name: Journal of Electronic Materials Journal Issue: 3 Vol. 26; ISSN JECMA5; ISSN 0361-5235
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
ANNEALING
BACKSCATTERING
CALCIUM
CHEMICAL VAPOR DEPOSITION
CRYSTAL DOPING
GALLIUM NITRIDES
ION IMPLANTATION
MAGNESIUM
MASS SPECTROMETERS
MONOCRYSTALS
NUMERICAL DATA
ORGANOMETALLIC COMPOUNDS
OXYGEN
RUTHERFORD SCATTERING
SAPPHIRE
SILICON
SUBSTRATES