DOPING OF CRYSTALS BY ION BOMBARDMENT TO PRODUCE SOLID STATE DETECTORS

Journal Article · Tue May 01 04:00:00 EDT 1962 · Rev. Sci. Instr.

DOI:https://doi.org/10.1063/1.1717929· OSTI ID:4830345

Alvaeger, T; Hansen, N J

Ion bombardment was used to produce silicon charged particle detectors because of two advantages over diffusion methods: the quantity of the desired impurity introduced can be precisely controlled by monitoring the ion beam current, and the undesirable impurities can be avoided; further, if the ions are accelerated to only very low energies, the junction will be shallow, and owing to the discrete range of the ions, the depth will be well-defined. The resulting detector will have a very thin window, or dead layer, and, for sufficiently high impurity con centration, the thickness of the window will be independent of the bias voltage applied to the detector. Preliminary results indicate that this method permits construction of detectors that have an energy resolution comparable to that obtained with diffused devices. (L.T.W.)

• Research Organization: Argonne National Lab., Ill.
• Sponsoring Organization: USDOE
• NSA Number: NSA-16-019132
• OSTI ID: 4830345
• Journal Information: Rev. Sci. Instr., Journal Name: Rev. Sci. Instr. Vol. Vol: 33
• Country of Publication: Country unknown/Code not available
• Language: English

Related Subjects

CHARGED PARTICLES
ELECTRIC POTENTIAL
ENERGY LEVELS
ENGINEERING AND EQUIPMENT
IMPURITIES
ION BEAMS
LAYERS
MONITORING
RADIATION DETECTORS
RESOLUTION
SEMICONDUCTORS
SILICON
THICKNESS
WINDOWS