CRYSTAL "DOPING" BY ION BOMBARDMENT

Journal Article · Sat Apr 01 04:00:00 EST 1961 · Rev. Sci. Instr.

DOI:https://doi.org/10.1063/1.1717405· OSTI ID:4031900

Rourke, F M; Sheffield, J C; White, F A

>The doping of metals and semiconductors with highly resolved ion beams eliminates reagent impurity contamination, provides high isotopic enrichment, and allows cross section determinations with 10/sup -8/ to 10/sup -11/ g of material thus eliminating self-shielding. To control the penetration depth of the bombarding ions in a magnetic analyzer, a variable high-voltage bias is used. In semiconductor research ionic doping is utilized to make shallow p-n or n-p junctions by impregnating a crystal of sillcon with group III or V elements. An ion bombardment technique is also being employed to determine if diffusion coefficients can be obtained by impregnating metallic filaments with a multiplicity of elements and isotopes. These lattice diffusion studies are an attempt to investigate whether the usual temperature dependence D = D/sub o/ exp (- epsilon /kT) has experimental validity on a microscopic scale. ( N.W.R.)

• Research Organization: Knolls Atomic Power Lab., Schenectady, N.Y.
• NSA Number: NSA-15-016264
• OSTI ID: 4031900
• Journal Information: Rev. Sci. Instr., Journal Name: Rev. Sci. Instr. Vol. Vol: 32
• Country of Publication: United States
• Language: English

Related Subjects

ABSORPTION
CONTAMINATION
CROSS SECTIONS
CRYSTALS
DIFFUSION
ELECTRIC POTENTIAL
ELEMENTS
ENRICHMENT
IMPREGNATION
IMPURITIES
ION BEAMS
IONS
ISOTOPES
LATTICES
MAGNETIC FIELDS
METALS
MICROSCOPY
PHYSICS
PLANNING
QUANTITATIVE ANALYSIS
RESOLUTION
SEMICONDUCTORS
SHIELDING
SILICON
TEMPERATURE
VOLTAGE
WIRES