ION BOMBARDMENT OF SILICON IN A GLOW DISCHARGE

Journal Article · Thu Aug 01 04:00:00 EDT 1963 · Journal of Applied Physics (U.S.)

DOI:https://doi.org/10.1063/1.1702756· OSTI ID:4635929

Strack, H

Silicon was bombarded with low-energy ions in a d-c glow discharge and simultaneously doped with phosphorus and boron. A simple theory describes the diffusion of substitutional elements in silicon influenced by ion bombardment. The distribution profile of phosphorus in 200 OMEGA -cm p-type silicon at a bombardment temperature of 820 deg C can be explained by assuming a diffusion coefficient of the form D(x) 3.6 exp (-- x/L) x STA mu /sup 2//h!, with L - 0.3 mu and x the distance from the instantaneous surface. L is interpreted as the diffusion length of excess vacancies created by the bombardment. The diffusion coefficient at the surface is higher by a factor of 10/sup 5/ than the one found in thermally activated diffusions. (auth)

• Research Organization: Shockley Transistor, Palo Alto, Calif.
• Sponsoring Organization: USDOE
• NSA Number: NSA-17-037741
• OSTI ID: 4635929
• Journal Information: Journal of Applied Physics (U.S.), Journal Name: Journal of Applied Physics (U.S.) Vol. Vol: 34; ISSN JAPIA
• Country of Publication: Country unknown/Code not available
• Language: English

Related Subjects

BORON
DEFECTS
DIFFUSION
DIFFUSION LENGTH
ELECTRIC CONDUCTIVITY
GLOW DISCHARGES
IMPURITIES
IONS
IRRADIATION
MEASURED VALUES
PHOSPHORUS
PHYSICS
SILICON
SURFACES
TEMPERATURE