Influence of oxygen on radiation-stimulated diffusion of phosphorus in silicon

Journal Article · Thu Jan 01 04:00:00 EST 1981 · Sov. Phys. - Semicond. (Engl. Transl.); (United States)

OSTI ID:6400916

Borisenko, V E; Buiko, L D; Labunov, V A; Ukhov, V A

An experimental investigation was made of the characteristics of radiation-stimulated diffusion of phosphorus in silicon in which the initial oxygen concentration was 1.8 x 10/sup 15/, 2.3 x 10/sup 16/, and 6.8 x 10/sup 16/ cm/sup -3/. Diffusion was stimulated by bombardment with 300 eV argon ions at temperatures 400, 500, and 600 /sup 0/C. The density of the ion current was 1 mA/cm/sup 2/ and the duration of irradiation was 30 min. It was found that the diffusion was stimulated in a surface layer up to 1.5 m thick. The post-irradiation phosphorus distribution profiles had a ''tail'' characteristic of the diffusion of two fluxes and the depth of this tail increased on increase in the oxygen concentration. The diffusion lengths of the stimulating defects were determined: L/sub d/1 = 0.086 +- 0.006 m and L/sub d/2 = 0.23 +- 0.02 m. A model of stimulated diffusion of phosphorus was considered assuming participation of vacancies (which were the short-range defects) and vacancy--impurity (vacancy--oxygen or vacancy--phosphorus) complexes, which were the long-range defects.

• Research Organization: Radio Engineering Institute, Minsk
• OSTI ID: 6400916
• Journal Information: Sov. Phys. - Semicond. (Engl. Transl.); (United States), Journal Name: Sov. Phys. - Semicond. (Engl. Transl.); (United States) Vol. 15:1; ISSN SPSEA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ARGON IONS
CHARGED PARTICLES
COLLISIONS
DIFFUSION
DIFFUSION LENGTH
DIMENSIONS
ELEMENTS
HIGH TEMPERATURE
IMPURITIES
ION COLLISIONS
IONS
LENGTH
NONMETALS
OXYGEN
PHOSPHORUS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMIMETALS
SILICON