Enhancement of phosphorus activation in vacancy engineered thin silicon-on-insulator substrates

Journal Article · Sun Nov 15 04:00:00 EST 2009 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3262527· OSTI ID:21361924

Smith, A J; Gwilliam, R M; Stolojan, V ^[1]; Knights, A P ^[2]; Coleman, P G; Kallis, A ^[3]; Yeong, S H ^[4]

---

1. Ion Beam Centre, Advanced Technology Institute, University of Surrey, Guildford GU2 7XH (United Kingdom)
2. Department of Engineering Physics, McMaster University, 1280 Main Street West, Hamilton, Ontario L8S 4L7 (Canada)
3. Department of Physics, University of Bath, Bath BA2 7AY (United Kingdom)
4. Department of Chemical and Biomolecular Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore 1175776 (Singapore)

The concentration of vacancy-type defects in a silicon-on-insulator substrate consisting of a 110 nm silicon overlayer and a 200 nm buried oxide has been quantified using variable energy positron annihilation spectroscopy following 300 keV Si{sup +} ion implantation to a dose of 1.5x10{sup 15} cm{sup -2} and subsequent annealing at temperatures ranging from 300 to 700 deg. C. The preferential creation of vacancies (relative to interstitials) in the silicon overlayer leads to a net vacancy-type defect concentration after annealing. Assuming that the defects have a structure close to that of the divacancy we determine the concentration to range from 1.7x10{sup 19} to 5x10{sup 18} cm{sup -3} for annealing temperatures ranging from 300 to 700 deg. C. The measured defect concentration is in excellent agreement with that predicted via Monte Carlo simulation. The impact of this net vacancy population on the diffusion and activation of phosphorus introduced by a 2 keV implantation to a dose of 1x10{sup 15} cm{sup -2} has been observed. For samples that combine both Si{sup +} and P{sup +} implantations, postimplantation phosphorus diffusion is markedly decreased relative to that for P{sup +} implantation only. Further, a fourfold increase in the electrical activation of phosphorus after postimplantation annealing at 750 deg. C is observed when both implantations of Si{sup +} and P{sup +} are performed. We ascribe this affect to the reduction in phosphorus-interstitial clusters by the excess vacancy concentration beyond the amorphous/crystalline interface created by the P{sup +} implantation.

• OSTI ID: 21361924
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 10 Vol. 106; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
ANNIHILATION
ANTILEPTONS
ANTIMATTER
ANTIPARTICLES
CALCULATION METHODS
CHARGED PARTICLES
COMPUTERIZED SIMULATION
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
CRYSTALS
ELEMENTARY PARTICLES
ELEMENTS
ENERGY RANGE
FERMIONS
HEAT TREATMENTS
INTERACTIONS
INTERSTITIALS
ION IMPLANTATION
IONS
KEV RANGE
LAYERS
LEPTONS
MATERIALS
MATTER
MONTE CARLO METHOD
NONMETALS
PARTICLE INTERACTIONS
PHOSPHORUS
PHOSPHORUS IONS
POINT DEFECTS
POSITRONS
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILICON
SILICON IONS
SIMULATION
SPECTROSCOPY
SUBSTRATES
VACANCIES