Structural and cathodoluminescence properties of ZnO nanorods after Ga-implantation and annealing

Journal Article · Fri May 15 04:00:00 EDT 2009 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3132865· OSTI ID:21352207

Yao, L D; Weissenberger, D; Duerrschnabel, M; Gerthsen, D ^[1]; Tischer, I; Wiedenmann, M; Feneberg, M; Reiser, A; Thonke, K ^[2]

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1. Laboratorium fuer Elektronenmikroskopie, Universitaet Karlsruhe, D-76128 Karlsruhe (Germany)
2. Institut fuer Halbleiterphysik, Universitaet Ulm, D-89069 Ulm (Germany)

Single-crystalline ZnO nanorods were implanted with 30 keV Ga{sup +} ions and fluences between 5x10{sup 12} and 1.5x10{sup 16} cm{sup -2}. Annealing treatments at temperatures up to 700 deg. C for 1 h were carried out to reduce implantation-induced structural defects. The structural and optical properties of the nanorods were studied by transmission electron microscopy (TEM) and cathodoluminescence (CL) spectroscopy. TEM shows that extended implantation defects vanish completely in nanorods implanted with doses up to 5x10{sup 13} cm{sup -2} after annealing at 700 deg. C. Dislocation loops remain after implantation with higher fluences. The CL intensity of as-grown nanorods and implanted ZnO nanorods is low. Annealing at 700 deg. C leads to a significant increase in the CL intensity for as-grown nanorods and implanted with a dose of up to 5x10{sup 13} cm{sup -2}. The strong CL intensity in implanted and annealed nanorods correlates with the complete disappearance of extended structural defects.

• OSTI ID: 21352207
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 10 Vol. 105; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
ANNEALING
BEAMS
CATHODOLUMINESCENCE
CHALCOGENIDES
CHARGED PARTICLES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
CRYSTALS
DISLOCATIONS
ELECTRON MICROSCOPY
EMISSION
ENERGY RANGE
GALLIUM IONS
HEAT TREATMENTS
ION BEAMS
ION IMPLANTATION
IONS
KEV RANGE
KEV RANGE 10-100
LINE DEFECTS
LUMINESCENCE
MATERIALS
MICROSCOPY
MONOCRYSTALS
NANOSTRUCTURES
OPTICAL PROPERTIES
OXIDES
OXYGEN COMPOUNDS
PHOTON EMISSION
PHYSICAL PROPERTIES
SEMICONDUCTOR MATERIALS
TRANSMISSION ELECTRON MICROSCOPY
ZINC COMPOUNDS
ZINC OXIDES